| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize fine patterning by lithography and to increase the arrangement density of patterns significantly. <P>SOLUTION: A pattern exhibiting good transmittance to a light having the exposure wavelength of a lower layer photosensitive material is formed, as a phase shifter, on the surface thereof with such a film thickness as the phase of a light passed through that pattern is substantially inverted from that of a light passed through a part where that pattern does not exist and then the lower layer photosensitive material is irradiated with an exposure light beam from above and exposed. The phase shifter is formed by applying an intermediate nonphotosensitive material and/or an upper layer photosensitive material onto the lower layer photosensitive material. Since the intensity of light being projected to the lower layer photosensitive material decreases only at the outline position of the phase shifter, a fine pattern is formed, and the pattern density is doubled because the patterns are formed on the opposite sides of the phase shifter. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
