| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can stably form a low-resistant nickel silicide film without increase of junction leakage current in a diffusion layer area containing an arsenic dopant densely. SOLUTION: The method is provided with a process of forming a diffusion layer area (205) containing the arsenic dopant by≥1×10<SP>20</SP>cm<SP>-3</SP>density by using a gate electrode (204) as a mask in the element region of an Si substrate (201) having an element separation insulating film, a process of depositing metal Ni (208) on the whole surface of the Si substrate, a process of thermally treating the Si substrate at <400°C to form the nickel silicide film (209) containing Ni<SB>2</SB>Si on the diffusion layer area, a process of removing unreacting metal Ni on the element separation insulating film, a process of thermally treating the Si substrate at≥450°C to form the NiSi film comprising an arsenide layer (211) on its surface, a process of removing the arsenide layer with alkali chemical, and a process of depositing an interlayer insulating film (212) on the whole surface of the Si substrate to form a wiring layer (213) piercing this inter-layer insulating film. COPYRIGHT: (C)2005,JPO&NCIPI |
