METHOD FOR PRODUCING SEMICONDUCTOR DEVICE UTILIZING ION IMPLANTATION

摘要

A method for producing a transistor structure utilizing ion implantation, comprising the steps of implanting ions of base-forming impurity into a predetermined portion of a surface of a semiconductor body serving as a collector and heated to a temperature above 600 DEG C. but below the melting point of the semiconductor to form a base region, and thereafter implanting ions of emitter-forming impurity into a predetermined portion of the surface of said base region heated to a temperature in the range of 400 DEG to 600 DEG C. to form an emitter region.