| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device and its control method wherein electrostatic charge of a wafer can be prevented surely. SOLUTION: This is provided with a wafer set base 2 to place a semiconductor wafer 1, a means 3 to irradiate an ion beam to the placed semiconductor wafer 1, an antistatic means 9 to supply an electric charge to the ion beam and to electrically neutralize it, a means 7 to detect an amount of irradiation of the ion beam in a block 4 installed at a region irradiated by the ion beam in the wafer set base 2 and the circumferential part of the wafer set base 2, and a means 8 to control action of the antistatic means so that an appropriate charge will be supplied to the semiconductor wafer based on the detected amount of irradiation. COPYRIGHT: (C)2005,JPO&NCIPI
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