| 摘要 |
PROBLEM TO BE SOLVED: To provide a test structure of a semiconductor element for detecting a defect size. SOLUTION: The structure has: a first test pattern (100) in which a plurality of metal patterns are formed with a distance from each other on an upper part of semiconductor substrate; a plurality of metal vias (300) formed on both ends of the metal patterns forming the first test pattern; and a second test pattern (500) which is electrically coupled with the metal vias, and electrically coupled with the first test pattern through the metal vias. Accordingly, by applying electric voltage to the first test pattern, and analyzing the difference between resistance in cases with and without metal failure in the metal patterns, a form or a size of the metal failure is detected. COPYRIGHT: (C)2005,JPO&NCIPI
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