NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THEREOF

摘要

A nitride semiconductor element, characterized in that it has a nitride semiconductor layer comprising an yttria-stabilized zirconia substrate (12) and a hexagnal InN being so oriented as for the c axis thereof to be approximately perpendicular to the (111) plane of the substrate (12); and a method for manufacturing the nitride semiconductor element which comprises providing a vapor deposition step of depositing the above InN to the (111) plane of the substrate. The above nitride semiconductor element is a III group nitride semiconductor (typically, InN and GaN) which has been grown with inhibition of the generation of a penetrated dislocation or an interface layer and thus has good quality.