发明名称 HIGH-FREQUENCY POWER AMPLIFYING CIRCUIT
摘要 <p>A high-frequency power amplifyi9ng circuit enabling suppression of the amount of variation of the collector current at the final stage even if the impedance of the load varies. The high-frequency power amplifying circuit comprises a final-stage transistor (Tr2) having a collector terminal (TC2) connected to an output terminal (102) through a capacitor (C3) and an output matching circuit (202) and a preceding-stage transistor (Tr1) having a collector terminal (TC1) connected to the base terminal (TB2) of the transistor (Tr2) through a capacitor (C2). The base terminal (TB1) of the transistor (Tr1) is connected to an input terminal (101) through a capacitor (C1) and the input matching circuit (201). Between the base terminal (TB2) and a base bias voltage applying terminal (110), resistors (R11, R13) are connected in series in order from the base bias voltage applying terminal (110) side. Between the connection node between the resistors (R11, R13) and the base terminal (TB1), a resistor (R12) is connected.</p>
申请公布号 WO2005006541(A1) 申请公布日期 2005.01.20
申请号 WO2004JP05596 申请日期 2004.04.20
申请人 MURATA MANUFACTURING CO., LTD.;KANEDA, AKIO;KAWAOKA, YOSHIZUMI 发明人 KANEDA, AKIO;KAWAOKA, YOSHIZUMI
分类号 H03F3/343;H03F3/191;(IPC1-7):H03F1/24 主分类号 H03F3/343
代理机构 代理人
主权项
地址