Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen

摘要

A method for improved adhesion between dielectric material layers at their interface during the manufacture of a semiconductor device, comprising operations for forming a first layer (1) of a dielectric material on a circuit structure (7) defined on a substrate of a semiconductor material (6) and subsequently forming a second layer (3) of dielectric material overlying the first layer (1). Between the first dielectric material layer and the second, a thin oxide layer (2) is formed in contact therewith. This interposed oxide (2) serves an adhesion layer function between two superimposed layers (1,3).