发明名称 |
WAFER CLEANING METHOD SIMULTANEOUSLY USING CHEMICAL AND PHYSICAL METHODS TO EFFECTIVELY ELIMINATE PARTICLES ON WAFER |
摘要 |
PURPOSE: A wafer cleaning method simultaneously using chemical and physical methods is provided to effectively eliminate the particles on a wafer as compared with a conventional technique using only a physical method without etch damage to each layer formed on the wafer. CONSTITUTION: A wafer on which a metal layer is formed is cleaned. A diluted ammonia water in which pure water and ammonia water of 30 weight percent are mixed in a volume ratio of 50:1 to 1000:1 and a megasonic generator are simultaneously used. The diluted ammonia water is put into a receptacle including the megasonic generator in its bottom. The wafer is dipped into the receptacle for a predetermined interval of time.
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申请公布号 |
KR100468691(B1) |
申请公布日期 |
2005.01.20 |
申请号 |
KR19970047195 |
申请日期 |
1997.09.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUN, JAE BEOM;KO, YONG SEON;SON, HONG SEONG |
分类号 |
H01L21/302;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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地址 |
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