| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a material of an antireflection film ensuring high etching selectivity to a resist, that is, a high etching speed to a resist, to provide a pattern forming method for forming an antireflection film layer on a substrate using this antireflection film material, and to also provide a pattern forming method using this antireflection film as a hard mask for substrate working. <P>SOLUTION: This antireflection film material comprises (A) a high molecular compound having repeating units by copolymerization represented by formula (1) and/or formula (2), (B) an organic solvent and (C) an acid generator. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
