| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composion of which polishing rate of a tantalum compound is sufficiently larger than that of copper, and polishing of SiO<SB>2</SB>does not substantially occur in a CMP (chemical mechanical polishing) process of polishing a semiconductor device equipped with a copper film, a barrier layer of tantalum compound, and an SiO<SB>2</SB>insulating layer. <P>SOLUTION: Abrasive material is a mixture composed of colloidal silica whose primary grains are 10 nm in average particle diameter and polymethyl methacrylate which is 30 nm in average particle diameter. The abrasive material, oxalic acid as organic acid, ammonium peroxy disulfate as an oxidizing agent, benzotriazole as an antioxidant are mixed into ion exchange water, and the mixed water solution is agitated with a high-speed homogenizer to scatter the ingredients uniformly into the water solution so as to obtain the polishing composition. The polishing material mixture contained in the polishing composition is 0.01 to 10.0 wt.% in concentration. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
