发明名称 |
ULTRA-SHORT CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To disclose a field effect transistor having an ultra-short channel length and the method of fabricating the same. SOLUTION: The ultra-short channel field effect transistor includes: a three-dimentional structure silicon-wire channel region; a source/drain junction formed of silicon conductive layers formed on both sides of the silicon-wire channel region; a gate electrode formed on the upper part of the silicon-wire channel region through a gate insulation film having a high dielectric constant therebetween; and source/drain electrodes connected to the source/drain junction. In the present invention, the stereostructural silicon-wire channel region can be formed to have a trapezoidal or trigonal profile through the utilization of the difference in an etching speed depending on a surface orientation of silicon, and the source/drain junction can be formed through the solid-state diffusion method. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005019984(A) |
申请公布日期 |
2005.01.20 |
申请号 |
JP20040169916 |
申请日期 |
2004.06.08 |
申请人 |
KOREA ELECTRONICS TELECOMMUN |
发明人 |
CHO WONJU;LEE SEONG JAE;YANG JONG HEON;OH JIHUN;IM KIJU;ANH CHANG GEUN |
分类号 |
H01L21/308;H01L21/00;H01L21/28;H01L21/306;H01L21/316;H01L21/336;H01L21/84;H01L29/04;H01L29/10;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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