| 摘要 |
PROBLEM TO BE SOLVED: To provide an annealing device, having a mechanism more simple than a conventional device, and to provide an annealing method employing the annealing device. SOLUTION: The annealing device is provided with a chamber (treatment chamber) 1, a heat radiating body 5 provided in the chamber 1, a graphite heater (heating unit) 7 for heating the heat radiating body 5 and a wafer holder (wafer transporting mechanism) 2 for approximating the SiC wafer W to the heat radiating body 5 while the wafer holder 2 approximates the SiC wafer W to the heat radiating body 5 whereby the SiC wafer W is annealed at a predetermined temperature by radiation heat from the heat radiating body 5. COPYRIGHT: (C)2005,JPO&NCIPI
|
