| 摘要 |
PROBLEM TO BE SOLVED: To avoid such a problem due to a hole that is produced when a porous Low-k film is used as an interlayer insulation film to form a wiring layer. SOLUTION: Wiring 113 is formed by using a wiring groove 108 that is formed in a sacrifice oxide film 104. After the sacrifice oxide film used as a mold for forming a wiring layer is removed by etching, an area where the sacrifice oxide film is removed is filled with a porous Low-k film, thereby forming an interlayer insulation film. COPYRIGHT: (C)2005,JPO&NCIPI
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