| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrically stabler capacitor with a small voltage dependence. SOLUTION: The semiconductor device is composed of two capacitors C1 and C2 comprising a polysilicon capacitor and an n-type transistor formed, for instance, on a semiconductor substrate 11 comprising a p-type silicon substrate with its element separated, for instance, by an STI (Shallow Trench Isolation) technology. Out of these, upper layer electrodes 15a and 15b of the capacitors C1 and C2 are formed in parallel with a gate electrode 15c as the n-type polysilicon having an identical impurity concentration. These capacitors C1 and C2 are connected to feeding terminals T1 and T2 in parallel each other with their voltage feeding direction reversed. COPYRIGHT: (C)2005,JPO&NCIPI
|
