| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein, in a millimeter wave oscillator which carries a Gunn diode element on a millimeter wave resonator substrate, heat sink properties of a semiconductor substrate for constituting a Gunn diode are so poor that a temperature of a Gunn diode active layer rises during operating, and hence a millimeter wave output is lowered remarkably. SOLUTION: The millimeter wave oscillator includes: the Gunn diode element 1 which is made by sequentially laminating a first n<SP>+</SP>-type layer, an n-type layer and a second n<SP>+</SP>-type layer of thin film semiconductors, and which is carried on the resonator substrate having a resonator (a signal electrode 3 and a ground electrode 4) made of a metal layer, formed on an upper surface of a dielectric substrate 2; and a high resistance region 8 of higher thermal conductivity than the dielectric substrate 2, formed on the dielectric substrate 2 directly under the Gunn diode element 1 so as to penetrate perpendicularly. The temperature rise of the Gunn diode element 1 at a driving time is suppressed by the high resistance region 8, a stable operation can be performed, and a millimeter wave output strength can be stabilized. COPYRIGHT: (C)2005,JPO&NCIPI
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