发明名称 |
Capacitor and method for producing a capacitor |
摘要 |
A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.
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申请公布号 |
US2005013090(A1) |
申请公布日期 |
2005.01.20 |
申请号 |
US20040853740 |
申请日期 |
2004.05.25 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
AHRENS CARSTEN;GEISELBRECHTINGER ANGELIKA;HARTUNG WOLFGANG;HERZUM CHRISTIAN;LOSEHAND REINHARD |
分类号 |
H01L21/334;H01L29/94;(IPC1-7):H01G4/228 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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