发明名称 Semiconductor injection locked lasers and method
摘要 In one aspect, the invention relates to a semiconductor laser. The laser includes a substrate and an elongate unitary laser structure disposed on the substrate. In turn, the elongate unitary laser structure includes a first laser section, a second laser section, and a plurality of shared layers. The first and second laser sections are capable of lasing independently of each other. The shared layers form both the first laser section and the second laser section. The first laser section is adapted for injection locking the second laser section.
申请公布号 US2005013337(A1) 申请公布日期 2005.01.20
申请号 US20040855799 申请日期 2004.05.27
申请人 JUNG THOMAS;LIOU KANG-YIH;SUNG HYUK-KEE;TISHININ DENIS;TSANG WON T.;WU MING C. 发明人 JUNG THOMAS;LIOU KANG-YIH;SUNG HYUK-KEE;TISHININ DENIS;TSANG WON T.;WU MING C.
分类号 H01S3/14;H01S5/00;H01S5/026;H01S5/40;(IPC1-7):H01S5/00 主分类号 H01S3/14
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