Schottky contact used in the production of electronic components comprises an insulating protective layer arranged on an insulating layer and in a protective region lying next to a metal-semiconductor transition

摘要

Schottky contact comprises an insulating protective layer (104) arranged on an insulating layer (314) and in a protective region (102) lying next to a metal-semiconductor transition. An independent claim is also included for a process for the production of a Schottky contact.