Production of semiconductor structure for integrated circuits comprises forming semiconductor substrate with a trench, depositing germanium-containing silicate glass to fill trench, melting silicate glass, and optionally back-polishing

摘要

Production of a semiconductor structure comprises forming a semiconductor substrate (1) with a trench (2), depositing germanium-containing silicate glass (10) having a melting temperature of 800-950[deg]C to fill the trench and cover the surrounding structure (5) forming a cavity (15) or seam in the trench, melting the silicate glass to remove the cavity or seam in the trench, and optionally back-polishing the silicate glass up to the upper side of the surrounding structure. An independent claim is also included for a semiconductor structure produced by the above process.