| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a configuration of a trench gate type power MOSFET, wherein an electric field in the vicinity of the corner of a gate insulating film can be relieved further. SOLUTION: A gate insulating film 106 is formed such that the closer a film thickness of a side wall lower part 111 comes to the bottom of a gate trench 110, the thicker it becomes, and a surface coming into contact with a gate electrode film 107 is an inclined surface 114. Accordingly, the corner of the gate insulating film 106 makes a gentle obtuse angle. According to this configuration, characteristics such as an electrostatic capacity Crss and an ON resistance Ron are maintained, while the electric field in the vicinity of the corner of a gate insulating film 206 can be relieved extremely. COPYRIGHT: (C)2005,JPO&NCIPI
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