发明名称 WET PROCESSING DEVICE, WET PROCESSING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress and prevent the formation of the elution region of a constituent atom such as a pit or the like on a semiconductor wafer. SOLUTION: In a wet processing, a plurality of semiconductor wafers 1W housed in a carrier 4 are dipped in a chemical solution EL containing fluoric acid to remove the oxide film of the semiconductor wafers 1W. Thereafter, the semiconductor wafers 1W is rinsed by using pure water, thereby washing and falling the chemical solution EL attached to the semiconductor wafers 1W. In at least the rinsing process, a light L is irradiated from a light source 3f provided in a wet etching device 3 to the semiconductor wafer 1W. An electromotive force by a battery function in a pn junction of the semiconductor wafers 1W is adjusted by adjusting a state of this light L, and the occurrence of the pit or the like is suppressed or prevented in the semiconductor wafers 1W. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005019665(A) 申请公布日期 2005.01.20
申请号 JP20030182123 申请日期 2003.06.26
申请人 TRECENTI TECHNOLOGIES INC 发明人 FUNAHASHI TOMOMASA;KUWABARA MASAKATSU;NEMOTO KAZUNORI;MIMA HIROYUKI;SUZUKI NORIO
分类号 H01L21/306;H01L21/00;H01L21/304;H01L21/311;(IPC1-7):H01L21/304 主分类号 H01L21/306
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