| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film gas sensor high in close adherence to a semiconductor gas-sensing film and little in fluctuations of shape. SOLUTION: In the thin-film gas sensor, the outer circumferences or both ends of thin support films L1-L3 are supported by a Si substrate B, a thin-film heater H, an insulating film L4 for covering the heater; the gas-sensing film S comprising a semiconductor and an electrode E for the gas-sensing film are formed on the support films; and a selective combustion layer C comprises a porous metal oxide such as Al<SB>2</SB>O<SB>3</SB>, Cr<SB>2</SB>O<SB>3</SB>and a noble metal catalyst, such as Pt and is provided on surfaces of the heater H, the insulating film L4, the gas-sensing film S and the electrode E. The selective combustion layer C is made to consist of a first selective combustion layer which does not include a silica sol binder for covering the gas sensing film and a second selective combustion layer, having the added silica sol binder for covering the first combustion layer. COPYRIGHT: (C)2005,JPO&NCIPI
|
