| 发明名称 |
Semiconductor device and method of fabricating the same |
| 摘要 |
A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm<3 >or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
|
| 申请公布号 |
US2005012171(A1) |
申请公布日期 |
2005.01.20 |
| 申请号 |
US20040902414 |
申请日期 |
2004.07.30 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIYAMA SUSUMU;YAMAMOTO AKIHITO;AKAHORI HIROSHI;SAIDA SHIGEHIKO |
| 分类号 |
H01L21/76;H01L21/31;H01L21/314;H01L21/316;H01L21/318;H01L21/762;H01L21/768;H01L21/8234;H01L23/522;H01L29/78;(IPC1-7):H01L21/336;H01L29/00 |
主分类号 |
H01L21/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
