| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing nitride semiconductor which can set the dislocation density of a nitride semiconductor not to be larger than 1×10<SP>8</SP>pieces/cm<SP>2</SP>without adding a high concentration of Si thereto, a nitride semiconductor wafer which has the nitride semiconductor obtained by such a method without being contaminated with remains Si, and a nitride semiconductor device. <P>SOLUTION: In the method of manufacturing nitride semiconductor by growing at least first to third nitride semiconductor layers on a substrate; the first nitride semiconductor layer is grown at a temperature of 400-600°C, the first nitride semiconductor layer is heat treated at a temperature of 700-1,300°C, the second and third nitride semiconductor layers are grown on the first nitride semiconductor layer at a temperature of 700-1,300°C, a hydrogen/nitrogen mixture gas containing 63 vol% or more of nitrogen is used as a carrier gas to be supplied to the vicinity of the substrate together with a source gas when the second layer is grown, a hydrogen/nitrogen mixture gas containing 50 vol% or more of nitrogen is used when the third layer is grown. Consequently, the second layer is formed to be thicker than 1μm. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
