METHOD FOR FORMING FEATURE OF 50 NM OR LESS HALF-PITCH WIDTH BY USING CHEMICALLY AMPLIFIED RESIST IMAGING

摘要

PROBLEM TO BE SOLVED: To provide a lithographic imaging method for use in the manufacture of an integrated circuit composed of patterned structure or other similarly patterned structures of very high resolution, the patterned structure having especially a feature with a half pitch of about 50 nm or less.

SOLUTION: Lithographic imaging of a 50 nm (or less) half-pitch feature in a chemically amplified resist (usually used in the manufacture of an integrated circuit) is made possible by the use of reduced temperature post-exposure processing and a low activation energy chemically amplified resist. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g. water).

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