发明名称 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DISPLAY PLATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor display plate capable of minimizing the errors of the alignment between layers. <P>SOLUTION: A gate line including a gate electrode is formed on the upper part of an insulating substrate. Next, a gate insulating film, a semiconductor layer and a resistant contact layer are successively formed and thereafter a conductive film is laminated thereon and is patterned to form a data line having a source electrode, a drain electrode and an alignment key for color filters. Thence a photosensitive film for the color filters including a pigment is applied on the upper part of the substrate and after a mask for the color filters is aligned on the basis of the alignment key for the color filters, the photosensitive film for the color filters is exposed and developed to successively form the color filters of red, green and blue. Next, a protective film is laminated thereon and is patterned to form contact holes for exposing the drain electrode and an IZO or ITO is laminated on the upper part of the protective film and is then patterned to form the pixel electrode to be connected to the drain electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005018082(A) 申请公布日期 2005.01.20
申请号 JP20040190036 申请日期 2004.06.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM DONG-GYO
分类号 G02F1/1368;G02F1/1333;G02F1/136;G02F1/1362;H01L21/336;H01L29/786 主分类号 G02F1/1368
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