MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the warp of a semiconductor wafer as much as possible in a manufacturing method of a semiconductor device in which a plated film formed by plating is formed on one surface side of the semiconductor wafer and the semiconductor wafer is thinned from the other surface side. SOLUTION: In the manufacturing method of the semiconductor device in which an Ni plated film 13a formed by electroless plating is formed on the side of one surface 100a of the semiconductor wafer 100 and the semiconductor wafer 100 is ground and thinned from the side of the other surface 100b of the semiconductor wafer 100, the process of thinning the semiconductor wafer 100 is executed before the process of forming the Ni plated film 13a. COPYRIGHT: (C)2005,JPO&NCIPI