| 摘要 |
PROBLEM TO BE SOLVED: To provide a developer composition for resist having a fast dissolving rate (high development sensitivity) and to provide a method for forming a resist pattern by using the composition. SOLUTION: In the developer composition for resist essentially comprising an organic quaternary ammonium salt group and containing a surfactant, the surfactant contains an anionic surfactant expressed by general formula (I). In formula (I), at least one of R<SB>1</SB>and R<SB>2</SB>represents a 5-18C alkyl group or alkoxy group and the other represents a hydrogen atom or a 5-18C alkyl group or alkoxy group, and at least one of R<SB>3</SB>, R<SB>4</SB>and R<SB>5</SB>represents a group expressed by general formula (II), wherein M is a metal atom, and others are hydrogen atoms or groups expressed by general formula (II). COPYRIGHT: (C)2005,JPO&NCIPI |
