| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a semiconductor device which is capable of preventing damages on an electrode formed of a low-melting-point metal, and efficiently terminating crystal defect of a semiconductor element. SOLUTION: In the method of manufacturing the semiconductor device, the semiconductor element 250 is formed on one surface of a semiconductor substrate 201 and a plurality of electrode layers 220, 230 conducting to the semiconductor element 250 are successively laminated with an interlayer insulating film formed of a silicon oxide film sandwiched between the electrode layers. This method has a last interlayer insulating film laminate forming process for laminating and forming the interlayer insulating film 221 of the uppermost portion among the interlayer insulating films, and a molecular hydrogen irradiating process for irradiating the semiconductor substrate on which the insulating film 221 is laminated and formed with a molecular hydrogen in which the molecular hydrogen 222 is dissociated. COPYRIGHT: (C)2005,JPO&NCIPI
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