| 摘要 |
PROBLEM TO BE SOLVED: To obtain a structure which can prevent inconvenience of reducing light passing through a photodetector without photodetecting by a light receiving layer and receiving the light from a rear surface side of a substrate which is not assumed to have to be originally incident in a GaN photodetector. SOLUTION: A semiconductor photodetector includes the substrate 15, at least a p-type GaN semiconductor 12 on the substrate 15, an n-type GaN semiconductor 14, and the light receiving layer 13 interposed between the p-type GaN semiconductor 12 and the n-type GaN semiconductor 14. In the semiconductor photodetector, a texture structure 16 is provided in which many hexagonal cones or cones are disposed at a rear surface side of the substrate 15. COPYRIGHT: (C)2005,JPO&NCIPI
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