| 摘要 |
FIELD: development of thin-film resistors on insulating substrates. ^ SUBSTANCE: proposed thin-film resistor has two opposing comb-shaped electrodes built around multilayer conducting structure and n rectangular resistor units at n >= 2 disposed in parallel with electrode width, the latter amounting to kl, where k > 0 and l is resistor unit length. Thin-film resistor also has n - 1 rectangular ports unoccupied by film components and disposed at ends of resistor units perpendicular to them. Resistor units whose width b1 equals that of electrodes minus minimal electrode-to-electrode gap b0 have equal shape factor Ks1. Thin-film resistor also has two contact pads each connected to one of electrode bases, that it to external part of comb-shaped electrode throughout its entire length; resistance Re of both electrodes is calculated from formula Re = 2rhon[l/(nKs) + b0/l](kn), where rhon is surface resistivity of multilayer conducting structure; Ks = l/b is shape factor of thin-film resistor; b - nb1 is width of thin-film resistor. ^ EFFECT: minimized resistance of thin-film resistor electrodes and of electrodes of each resistor unit. ^ 1 cl |
