| 摘要 |
PROBLEM TO BE SOLVED: To provide a multichannel horizontal insulated-gate bipolar transistor that suppresses the sacrifice of current driving ability and in which a latch-up hardly occurs. SOLUTION: In the surface layer of a p-type base region 2, two first and second n-type emitter regions 4a and 4b are formed and a p-type contact region 3 is formed so that the region 3 may overlap the emitter regions 4a and 4b. Then an n-type buffer region 9 is selectively formed on the surface of an n-type semiconductor substrate 1 at a fixed distance from the p-type base region 2, and a p-type collector region 10 is formed in the surface layer of the buffer region 9. In addition, gate electrodes 6a and 6b are disposed through gate oxide films 5a and 5b so that first and second channel regions A and B may be formed in the surface layer of the p-type base region 2 sandwiched between an n-type drift region 1a and the first and second n-type emitter regions 4a and 4b. Moreover, the occurrence of a latch-up in the neighborhood of the first channel region A is suppressed by reducing a hole current Ih1 by adjusting the channel lengths LchA and LchB of the first and second channel regions A and B to become LchA>LchB. COPYRIGHT: (C)2005,JPO&NCIPI
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