| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the polishing of a semiconductor substrate at the ends of active regions can be prevented at the time of removing films formed on the active regions and having nonuniform thicknesses by the CMP method. SOLUTION: Element separating regions 7a are formed by causing silicon oxide films 7 to deposit in element separating grooves formed into a semiconductor substrate 1 so as to fill up the grooves. For the deposition of the silicon oxide films 7, the high-density plasma CVD method is used. Successively, a silicon oxide film 8 having a nearly uniform thickness is formed on the silicon oxide films 7. Then, after a resist film having openings at the central parts of the active regions 6 is formed by using the photolithographic technique, parts of the silicon oxide films 8 and silicon oxide films 7 at the central parts are etched off by using the resist film as a mask. Thus, the silicon oxide films 7 and 8 are polished by the CMP method by making the thicknesses of the silicon oxide films 7 at the central parts thinner than the total thickness of the films 7 and 8 formed at the ends 6a of the active regions 6. COPYRIGHT: (C)2005,JPO&NCIPI
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