发明名称 Method and system for using ion implantation for treating a low-k dielectric film
摘要 A system and method for forming a mechanically strengthened low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. An upper surface of the low-k dielectric film is then treated in order to increase the film's mechanical strength, or reduce its dielectric constant.
申请公布号 US2005012201(A1) 申请公布日期 2005.01.20
申请号 US20040857935 申请日期 2004.06.02
申请人 TOKYO ELECTRON LIMITED 发明人 DUERKSEN KENNETH;VIDUSEK DAVID A.
分类号 H01G4/236;H01L;H01L21/31;H01L21/3105;H01L21/312;H01L21/336;H01L21/469;H01L23/14;(IPC1-7):H01G4/236 主分类号 H01G4/236
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