发明名称 |
Method and system for using ion implantation for treating a low-k dielectric film |
摘要 |
A system and method for forming a mechanically strengthened low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. An upper surface of the low-k dielectric film is then treated in order to increase the film's mechanical strength, or reduce its dielectric constant.
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申请公布号 |
US2005012201(A1) |
申请公布日期 |
2005.01.20 |
申请号 |
US20040857935 |
申请日期 |
2004.06.02 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
DUERKSEN KENNETH;VIDUSEK DAVID A. |
分类号 |
H01G4/236;H01L;H01L21/31;H01L21/3105;H01L21/312;H01L21/336;H01L21/469;H01L23/14;(IPC1-7):H01G4/236 |
主分类号 |
H01G4/236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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