SEMICONDUCTOR DEVICE WITH DAMASCENE BITLINE AND FABRICATING METHOD THEREOF TO FORM BITLINE WITH CD SMALLER THAN THAT OF PHOTOLITHOGRAPHY PROCESS

摘要

PURPOSE: A semiconductor device with a damascene bitline is provided to form a bitline with a CD(critical dimension) smaller than that of a photolithography process by controlling the thickness of an insulation layer formed in a trench. CONSTITUTION: A semiconductor substrate(40) is prepared. The first interlayer dielectric(52) is formed on the semiconductor substrate. A trench is formed in the first interlayer dielectric. A contact hole(58) is formed in the first interlayer dielectric to have a step with the bottom of the trench, extending from the bottom of the trench to the semiconductor substrate. The contact hole and the trench are filled with a conductive layer for a damascene bitline. A spacer is formed between the conductive layer and the inner surface of the trench.