METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH CONTACT TO FORM RELIABLE CONTACT OF SMALL SIZE

摘要

PURPOSE: A method for fabricating a semiconductor device with a contact is provided to form a reliable contact of a small size by performing a dry etch process and a wet etch process. CONSTITUTION: A plurality of gates(34) whose upper part and sidewall are surrounded by a gate spacer(40) are formed on a semiconductor substrate(30). An interlayer dielectric(42) is formed on the resultant structure including the plurality of gates. The interlayer dielectric in a region where a contact for exposing the semiconductor substrate between the plurality of gates is to be formed is selectively removed until the gate spacer is exposed so that a hole(46) composed of the interlayer dielectric and the gate spacer is formed. A sidewall spacer(48) is formed on the sidewall of the hole. The interlayer dielectric on the bottom surface of the hole exposed by the sidewall spacer is selectively removed until the semiconductor substrate is exposed so that the contact is formed.