| 摘要 |
PROBLEM TO BE SOLVED: To perform thermal oxidation while preventing fall or deformation of a semiconductor column without decreasing throughput in forming an insulating region within a semiconductor substrate, by perfectly thermally oxidizing the semiconductor column between trenches after forming a plurality of trenches on the semiconductor substrate. SOLUTION: A method of manufacturing a semiconductor substrate includes a step of forming the insulating region within the semiconductor substrate by thermally oxidizing a semiconductor portion sandwiched between the trenches after forming the plurality of trenches on the semiconductor substrate 1. In this manufacturing method, the mask 2 of a pattern in which an opening width b for forming trenches positioned on ends among the plurality of trenches is smaller than an opening width c for forming trenches positioned other than the ends is formed on the surface of the substrate, and the surface is etched using this mask 2, thereby forming the plurality of trenches each having the same depth on the semiconductor substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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