| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is normally off and has high carrier mobility and a high breakdown voltage, and to provide a method of manufacturing the device. SOLUTION: The semiconductor device is provided with a semiconductor substrate 100 composed of a first-conductivity semiconductor substrate 1 and a first-conductivity epitaxial layer 2 which is formed on the first principal surface of the substrate 1 and is lower in impurity concentration than the substrate 1, second-conductivity base regions 3a and 3b formed in a prescribed area of the surface layer of the epitaxial layer 2 and having prescribed depths, and first-conductivity source regions 4a and 4b formed in a prescribed area of the surface layer and having shallower depths than the base regions 3a and 3b have. The device is also provided with a surface channel region 5 formed to connect the source regions 4a and 4b and epitaxial layer 2 to each other, a gate electrode 10 formed to face the surface channel region 5 through a gate insulating film 6 and composed of a semiconductor material having a work function of≥5.1 eV, and a source electrode 8 formed to come into contact with the base regions 3a and 3b and source regions 4a and 4b. In addition, the device is also provided with a drain electrode 9 formed at a prescribed position of the semiconductor substrate 100. COPYRIGHT: (C)2005,JPO&NCIPI
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