| 摘要 |
PROBLEM TO BE SOLVED: To prevent a photoresist layer formed on a thin layer (e.g. silicon nitride, silicon oxide, metal, diamond) from stripping off by an etching solution. SOLUTION: A thin layer (fixed layer) 1 is formed on a silicon substrate 3 and through-holes 4 are formed on the fixed layer by etching. In addition, cavities are dug so that they make around the lower part of the fixed layer which is left by etching. Next, the photoresist layer 5 is formed so that it fills the cavities under the fixed layer. The overhung rims 12 of the fixed layer 1 are fixed so that they do not strip off the photoresist layer. COPYRIGHT: (C)2005,JPO&NCIPI
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