METHOD OF FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To make excellent the shape of a resist pattern obtained by the immersion lithography. SOLUTION: After a resist film 101 composed of a chemically amplified resist material is formed, a resist film 102 is exposed to a pattern by selectively projecting exposing light 104 upon the film 102 in a state where a solution 103 containing a basic compound is supplied to the surface of the film 102. When the resist film 102 is developed with an alkaline developing solution after post-baking is performed on the resist film 102 exposed to the pattern, a resist pattern 106 composed of the unexposed sections 102b of the film 102 and having an excellent shape is obtained. COPYRIGHT: (C)2005,JPO&NCIPI