HIGH FREQUENCY POWER AMPLIFIER CIRCUIT, ELECTRONIC COMPONENT FOR HIGH FREQUENCY POWER AMPLIFICATION AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce the variations of high frequency power amplification characteristics by correcting the deviation of bias points by a short channel effect of an FET in an electronic component (RF power module) for high frequency power amplification constituted so as to provide a bias to an FET for amplification by a current mirror system. SOLUTION: In the high frequency power amplifier circuit (RF power module) constituted so that the bias voltage for a transistor (Q2) for amplification of the high frequency power amplifier circuit is provided by a transistor (Q1) for the bias connected with the transistor for amplification and with a current mirror, a second pad (P2') connected with a control terminal of the transistor for the bias to be connected with the transistor for amplification with the current mirror is provided separately from a pad (external terminal P2) connected with a control terminal of the transistor for amplification. COPYRIGHT: (C)2005,JPO&NCIPI