PROCESS FOR FABRICATING SEMICONDUCTOR ELEMENT, AND W MATERIAL FOR MAGNETRON SPUTTERING SYSTEM

摘要

PROBLEM TO BE SOLVED: To suppress the leak current of a semiconductor element by employing a film composed of a high melting point metal, an alloy of a high melting point metal, a silicide of a high melting point metal, and a nitride of Ti, Ta, W, and a Ti-W alloy in a contact barrier layer or a gate electrode in order to attain a highly reliable semiconductor element. SOLUTION: In the process for fabricating a semiconductor element, a W material for a magnetron sputtering system having an Al concentration not higher than 1 ppm is prepared by removing Al from a W material, and a contact barrier or gate electrode layer having an Al content not higher than 1×1018atoms/cm3is formed using the W material by sputtering, wherein the junction depth of a source-drain region is 0.3μm or less. COPYRIGHT: (C)2005,JPO&NCIPI