| 摘要 |
PROBLEM TO BE SOLVED: To ensure stabilized device characteristics in a gallium nitride based compound semiconductor laser having a current constriction layer provided with a stripe opening. SOLUTION: On the p-side or the n-side of an active layer composed of a gallium nitride based compound semiconductor in a gallium nitride based compound semiconductor laser, there are formed (a) a first semiconductor layer 22 of gallium nitride based compound semiconductor containing Al at a ratio lower than that of a current constriction layer 30, (b) a second semiconductor layer 24 of gallium nitride based compound semiconductor formed on the first semiconductor layer 22 and containing Al at a ratio lower than that of the first semiconductor layer 22, and (c) the current constriction layer composed of In<SB>x</SB>Al<SB>y</SB>Ga<SB>1-x-y</SB>N (0≤x≤0.1, 0.5≤y≤1, 0.5≤x+y≤1) and having a stripe opening, and then the second semiconductor layer 24 is removed from the opening 32 of the current constriction layer 30 by etch back. COPYRIGHT: (C)2005,JPO&NCIPI
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