发明名称 |
Method for manufacturing semiconductor device |
摘要 |
An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
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申请公布号 |
US2005014319(A1) |
申请公布日期 |
2005.01.20 |
申请号 |
US20040885636 |
申请日期 |
2004.07.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;IMAI KEITARO;MAEKAWA SHINJI;FURUNO MAKOTO;NAKAMURA OSAMU |
分类号 |
H01L29/786;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;(IPC1-7):H01L21/00;H01L21/823 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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