| 发明名称 |
Thin film transistor formed on a transparent substrate |
| 摘要 |
A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
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| 申请公布号 |
US2005012098(A1) |
申请公布日期 |
2005.01.20 |
| 申请号 |
US20040911833 |
申请日期 |
2004.08.05 |
| 申请人 |
SATOU YOSHINOBU;YUDA KATSUHISA;TANABE HIROSHI |
发明人 |
SATOU YOSHINOBU;YUDA KATSUHISA;TANABE HIROSHI |
| 分类号 |
G02F1/136;B23K26/04;B23K26/06;G02F1/1368;H01L21/027;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L23/544;H01L27/12;H01L27/146;H01L29/786;(IPC1-7):H01L31/036 |
主分类号 |
G02F1/136 |
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