| 摘要 |
1277315 Epitaxial crystal growing MOTOROLA Inc 15 June 1970 [6 Aug 1969] 28815/70 Heading B1S A crystal is grown epitaxially on a substrate 18 in a recess 16 of block 12, on top of which is located a further block 20 having a central hole 24 containing solvent 30, source material 32 and a slidable piston 28. The block 20 is slidable over the block 12, and the contents of the hole are inserted whilst the hole and recess are out of registration (Figs. 2A-2D not shown), the blocks being heated before being slid into registration as shown. The hole has an inwardly directed shoulder 26 at its lower edge, which wipes excess solvent off the layer of crystal at the termination of the process, when the blocks are slid out of registration. The blocks may be of e.g. graphite or boron nitride and the piston the same or e.g. porous alumina. The upper block is maintained 2-60 ‹C above the lower block during crystal growth, but this gradient may initially be reversed to improve, the final product. The following semiconductor materials may be prepared (solvent in brackets); GaSb, GaAs or GaP (Ga); InSb or InP (In); AlAs (Al); ZnTe (Zn); CdSe (Cd). Block 12 may have a plurality of recesses. |
