发明名称 FIELD EFFECT ORGANIC TRANSISTOR
摘要 <p>A field effect organic transistor includes a source electrode, a drain electrode, a gate electrode, a gate insulating layer and an organic semiconductive layer; in the field effect organic transistor, the organic semiconductive layer includes a first organic semiconductive layer forming a channel region and a second organic semiconductive layer arranged to abut the first organic semiconductive layer; the charge mobility (mu1) in the first organic semiconductive layer is 10&lt;-3&gt; cm&lt;2&gt;/Vs or more; the charge mobility (mu2) in the second organic semiconductive layer is 10&lt;-4&gt; cm&lt;2&gt;/Vs or less; and the ratio (mu1/&mu2) between the two organic semiconductive layers is 10 or more.</p>
申请公布号 WO2005006461(A1) 申请公布日期 2005.01.20
申请号 WO2004JP09789 申请日期 2004.07.02
申请人 CANON KABUSHIKI KAISHA;NAKAMURA, SHINICHI 发明人 NAKAMURA, SHINICHI
分类号 H01L51/05;H01L29/786;H01L51/00;H01L51/30;(IPC1-7):H01L51/20 主分类号 H01L51/05
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