| 发明名称 |
Method for forming a mutiple gate semiconductor device |
| 摘要 |
<p>A multi-gate device in accordance with an embodiment of the present invention comprises at least two gates. The dopant distribution in the semiconductor body of the device varies from a low value near the surface of the body towards a higher value inside the body of the device.</p> |
| 申请公布号 |
EP1498958(A2) |
申请公布日期 |
2005.01.19 |
| 申请号 |
EP20040447178 |
申请日期 |
2004.07.16 |
| 申请人 |
INTERUNIVERSITAIR MICROELECTRONICA CENTRUM VZW (IMEC) |
发明人 |
DIXIT, ABHISEK;DE MEYER, KRISTIN |
| 分类号 |
H01L29/66;H01L21/336;H01L29/10;H01L29/78;H01L29/786;(IPC1-7):H01L29/786;H01L29/423 |
主分类号 |
H01L29/66 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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