发明名称 MULTIPLE THICKNESS SEMICONDUCTOR INTERCONNECT AND METHOD THEREFOR
摘要 A conductive line varies in thickness to assist in overcoming RC delays and noise coupling. By varying line thickness, variation in conductor width is avoided if necessary to maintain a specified minimum pitch between conductors while maintaining predetermined desired RC parameters and noise characteristics of the conductive line. Conductor depth variation is achieved by etching a dielectric layer to different thicknesses. A subsequent conductive fill over the dielectric layer and in the differing thicknesses results in a conductive line that varies in thickness. Different conductive line thicknesses available at a particular metal level can additionally be used for semiconductor structures other than a signal or a power supply conductive line, such as a contact, a via or an electrode of a device. The thickness analysis required to determine how interconnect thickness is varied in order to meet a desired design criteria may be automated and provided as a CAD tool.
申请公布号 KR20050007531(A) 申请公布日期 2005.01.19
申请号 KR20047017954 申请日期 2003.04.15
申请人 发明人
分类号 H01L21/3205;H01L21/768;H01L23/52;H01L23/528 主分类号 H01L21/3205
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